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Home › Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

US Patent 11075276 · Granted Jul 27, 2021

Estimated economic value: $132,720,000 ⓘ

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