Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GaN-based microwave power device with large gate width and manufacturing method thereof

GaN-based microwave power device with large gate width and manufacturing method thereof

US Patent 11069787 · Granted Jul 20, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Preparation method of high-linearity GaN-based millimeter wave device2025
Micro-sized face-up led device with micro-hole array and preparation method ther2025
Conductive thin film for ultraviolet waveband and preparation method therefor2024
Conductive thin film for ultraviolet waveband and preparation method therefor2024
Welding method of demetallized ceramic substrate having surface capillary microg2024
Epitaxial structure of GaN-based radio frequency device based on Si substrate an2023
Epitaxial structure of GaN-based radio frequency device based on Si substrate an2023
Efficient wide bandgap GaN-based LED chip based on surface plasmon effect and ma2021
USB flash disk2020
Double freeform-surface lens with uniform color temperature2020
Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method 2020
Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method 2020