Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Conformal source and drain contacts for multi-gate field effect transistors

Conformal source and drain contacts for multi-gate field effect transistors

US Patent 11063128 · Granted Jul 13, 2021

Estimated economic value: $15,415,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of fabricating three-dimensional object and apparatus for fabricating thr2025
Semiconductor device and method of manufacture2025
Apparatus and method for use with a substrate chamber2025
Annealing apparatus and method of operating the same2025
Apparatus and method for use with a substrate chamber2025
Semiconductor device and methods of forming the same2025
Method of manufacturing a source/drain of a semiconductor device using multiple 2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device having multi-layer epitaxial structures with different latt2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device and manufacturing method thereof2025
Systems, methods, and semiconductor devices2025