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Home › Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices

Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices

US Patent 11056586 · Granted Jul 6, 2021

Estimated economic value: $36,777,000 ⓘ

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