Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional NAND memory device with source line comprising metallic and semiconductor layers

Three-dimensional NAND memory device with source line comprising metallic and semiconductor layers

US Patent 11056501 · Granted Jul 6, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor storage device and manufacturing method thereof2025
Semiconductor memory device2024
Semiconductor device2024
Memory device2024
Semiconductor storage device and method of manufacturing semiconductor storage d2024
Semiconductor storage device with insulating layers for etching stop2024
Semiconductor storage device2024
Semiconductor device and method of manufacturing the same2023
Semiconductor memory device2023
Semiconductor memory device2023
Semiconductor device and method of manufacturing the same2022
Semiconductor memory device2022