Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation

Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation

US Patent 11049939 · Granted Jun 29, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduced local threshold voltage variation MOSFET using multiple layers of epi fo2023
Semiconductor device simulation2020
Memory device2018
Fluctuation resistant FinFET2017
Method of manufacturing variation resistant metal-oxide-semiconductor field effe2016
Manufacture of a variation resistant metal-oxide-semiconductor field effect tran2016
Gate recessed FDSOI transistor with sandwich of active and etch control layers2016
Fluctuation resistant low access resistance fully depleted SOI transistor with i2016
Fluctuation resistant FDSOI transistor with implanted subchannel2015
Variation resistant MOSFETs with superior epitaxial properties2015
Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)2015