Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same

High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same

US Patent 11038046 · Granted Jun 15, 2021

Estimated economic value: $2,894,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor memory device and fabrication method thereof2025
High electron mobility transistor and method for forming the same2025
High electron mobility transistor and method for forming the same using the meta2025
Semiconductor device and fabricating method thereof2025
Semiconductor device2025
Semiconductor die2025
High electron mobility transistor with improved barrier layer2025
High electron mobility transistor including conductive plate filling trenches in2025
Hemt with plate over channel layer2025
Method of fabricating semiconductor device2025
Manufacturing method of semiconductor device2025
HEMT with stair-like compound layer at drain2025