Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure

Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure

US Patent 11018155 · Granted May 25, 2021

Estimated economic value: $23,972,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System for predicting properties of structures, imager system, and related metho2025
Integrated circuitry and method used in forming a memory array comprising string2025
Integrated assemblies which include stacked memory decks, and methods of forming2025
Memory arrays comprising strings of memory cells and methods used in forming a m2025
Memory device including control gates having tungsten structure2025
Integrated circuitry comprising a memory array comprising strings of memory cell2025
Method used in forming a memory array comprising strings of memory cells using p2025
Memory arrays comprising strings of memory cells with conductive islands2025
Barrier structure for preventing etching to control circuitry2025
Methods of forming microelectronic devices, and related microelectronic devices,2025
Memory devices having vertical transistors and methods for forming the same2025
Carbon-coated lithium-rich oxide composite material and preparation method there2025