Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods

Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods

US Patent 11018023 · Granted May 25, 2021

Estimated economic value: $21,738,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Defect reduction of semiconductor layers and semiconductor devices by anneal and2025
High-electron-mobility transistor (HEMT) semiconductor devices with reduced dyna2022
Remote contacts for a trench semiconductor device and methods of manufacturing s2022
Guard rings for cascode gallium nitride devices2021
Semiconductor component and method of manufacture2021
Process of forming an electronic device including an access region2020
Electronic device comprising a die comprising a high electron mobility transisto2020
Semiconductor component and method of manufacture2020
High-electron-mobility transistor (HEMT) semiconductor devices with reduced dyna2020
Method of forming a heterojunction semiconductor device having integrated clampi2020
Cascode circuit having a gate of a low-side transistor coupled to a high-side tr2020
Process of forming an electronic device including forming an electronic componen2019