Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor with contacted deep well region

Transistor with contacted deep well region

US Patent 11011615 · Granted May 18, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Threshold voltage adjustment using adaptively biased shield plate2024
Threshold voltage adjustment using adaptively biased shield plate2023
Series shunt biasing method to reduce parasitic loss in a radio frequency switch2023
Optically powered switch and method for operating an optically powered switch2022
Threshold voltage adjustment using adaptively biased shield plate2021
Backside contact of a semiconductor device2021
High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in 2021
Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconduct2021
Silicon-on-insulator backside contacts2021
Non-volatile memory (NVM) structure with front and back gates2020
Radio frequency silicon-on-insulator integrated heterojunction bipolar transisto2020
LDMOS with adaptively biased gate-shield2020