Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mirror device structure for power MOSFET and method of manufacture

Mirror device structure for power MOSFET and method of manufacture

US Patent 11004970 · Granted May 11, 2021

Estimated economic value: $45,570,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Termination ballast to suppress hotspot formation in trench field plate power MO2025
Termination ballast to suppress hotspot formation in trench field plate power MO2025
Termination ballast to suppress hotspot formation in trench field plate power MO2025
Termination ballast to suppress hotspot formation in trench field plate power MO2025
Transistor with integrated short circuit protection2024
Transistor with integrated short circuit protection2024
Transistor with integrated short circuit protection2024
Termination for trench field plate power MOSFET2023
Termination for trench field plate power MOSFET2023
Termination for trench field plate power MOSFET2023
Termination for trench field plate power MOSFET2023
Mirror device structure for power MOSFET and method of manufacture2022