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Home › Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping

US Patent 10998423 · Granted May 4, 2021

Estimated economic value: $37,420,000 ⓘ

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