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Home › Semiconductor device having a vertical channel layer with an impurity region surrounding a dielectric core

Semiconductor device having a vertical channel layer with an impurity region surrounding a dielectric core

US Patent 10991716 · Granted Apr 27, 2021

Assignee

Sk Hynix

Inventors

In Su PARK (64 patents)
Do Yeon Kim (135 patents)
Ki Hong Lee (253 patents)

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