Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming heterojunction bipolar transistor (HBT)

Method of forming heterojunction bipolar transistor (HBT)

US Patent 10971598 · Granted Apr 6, 2021

Estimated economic value: $84,827,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit testing using on-chip electrical test structure2019
Common deployment model2018
Through-chip via interconnects for stacked integrated circuit structures2011
Surface treatment in preparation for contact placement2009
Integrated inorganic/organic complementary thin-film transistor circuit and a me2003