Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor device with a field electrode that includes two layers

Transistor device with a field electrode that includes two layers

US Patent 10957771 · Granted Mar 23, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor die with a vertical transistor device2025
Semiconductor die with a transistor device and method of manufacturing the same2025
Semiconductor package and methods of manufacturing a semiconductor package2024
Planar gate semiconductor device with oxygen-doped Si-layers2024
Composite wafer, semiconductor device and electronic component2023
Transistor device with a field electrode that includes two layers2023
Semiconductor transistor device and method of manufacturing the same2022
Composite wafer, semiconductor device and electronic component2022
Electronic circuit with a transistor device and a clamping circuit2021
Semiconductor package and methods of manufacturing a semiconductor package2021
Semiconductor module, electronic component and method of manufacturing a semicon2021
Semiconductor device having body contacts with dielectric spacers and correspond2021