Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with negative capacitance material in buried channel

Semiconductor device with negative capacitance material in buried channel

US Patent 10937886 · Granted Mar 2, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory with a contact between a data storage device and a data processing device2025
Memory structure and method of forming thereof2025
Method for manufacturing a semiconductor memory2025
Semiconductor device having a shielding line for signal crosstalk suppression2025
Manufacturing method of semiconductor structure2024
Memory structure and method of forming thereof2024
Semiconductor device including a buried channel array transistor structure2024
Semiconductor structure and manufacturing method thereof2024
Method of fabricating semiconductor structure2023
Method of fabricating semiconductor structure2023
Method of manufacturing semiconductor device having reduced contact resistance b2023
Method for preparing semiconductor device with T-shaped buried gate electrode2023