Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High electron mobility transistors having improved drain current drift and/or leakage current performance

High electron mobility transistors having improved drain current drift and/or leakage current performance

US Patent 10937873 · Granted Mar 2, 2021

Estimated economic value: $159,412,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RF amplifier devices and methods of manufacturing including modularized designs 2025
High electron mobility transistors having reduced drain current drift and method2025
High electron mobility transistors having reduced drain current drift and method2025
IPD components having SiC substrates and devices and processes implementing the 2025
Field effect transistor with stacked unit subcell structure2025
Field effect transistor with selective channel layer doping2025
Plasma-based barrier layer removal method for increasing peak transconductance w2025
Plasma-based barrier layer removal method for increasing peak transconductance w2025
Transistor device structure with angled wire bonds2025
Field effect transistor with multiple stepped field plate2025
Radio frequency transistor amplifiers having self-aligned double implanted sourc2025
Group III nitride-based monolithic microwave integrated circuits having multi-la2025