Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices

Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices

US Patent 10937869 · Granted Mar 2, 2021

Estimated economic value: $38,447,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor2025
Electrical component with a dielectric passivation stack2024
Systems and methods for junction termination of wide band gap super-junction pow2023
Electrical component with a dielectric passivation stack2022
Semiconductor device and method for reduced bias threshold instability2022
Wireless access credential system2022
Aircraft wing assembly2022
Systems and methods for junction termination in semiconductor devices2022
Systems and methods for junction termination of wide band gap super-junction pow2022
Systems and methods for unipolar charge balanced semiconductor power devices2022
Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor2021
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor2021