Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ferroelectric field-effect transistor devices having a top gate and a bottom gate

Ferroelectric field-effect transistor devices having a top gate and a bottom gate

US Patent 10937807 · Granted Mar 2, 2021

Estimated economic value: $34,569,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory comprising conductive ferroelectric material in series with dielectric ma2025
Capacitor with dual dielectric layers2025
Differentially programmable magnetic tunnel junction device and system including2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Compositional engineering of Schottky diode2025
Compositional engineering of Schottky diode2025
Thin film transistors having strain-inducing structures integrated with 2D chann2025
Integrated circuit devices with FinFETs over gate-all-around transistors2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and metho2025
Stacked 2D CMOS with inter metal layers2025
Integrated circuit assemblies with stacked compute logic and memory dies2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025