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Home › Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors

Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors

US Patent 10930791 · Granted Feb 23, 2021

Estimated economic value: $31,062,000 ⓘ

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