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Home › Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

US Patent 10930500 · Granted Feb 23, 2021

Estimated economic value: $31,062,000 ⓘ

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