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Home › Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device

Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device

US Patent 10903357 · Granted Jan 26, 2021

Estimated economic value: $27,071,000 ⓘ

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