Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate devices and methods of formation using angled ions

Gate devices and methods of formation using angled ions

US Patent 10903211 · Granted Jan 26, 2021

Estimated economic value: $35,448,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Direct backside self-aligned contact2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Stacked transistors having self aligned backside contact with backside replaceme2025
L-type wordline connection structure for three-dimensional memory2025
Three dimensional memory device and method of fabrication2025
Carbon and boron implantation for backside chemical mechanical planarization con2025
Selective trench modification using directional etch2025
Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) d2025
Heterogeneous gate all around dielectric thickness2025
Methods, apparatus, and manufacturing system for self-aligned patterning of a ve2025
Semiconductor backside contact structure with increased contact area2025
Shadow mask apparatus and methods for variable etch depths2025