Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth

Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth

US Patent 10896818 · Granted Jan 19, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Anti-jamming processing architecture based on dual-component fusion application 2025
Method and system for automatically tagging data2025
Polyoxometalate complexes and pharmaceutical compositions2025
Half-cell assembly2024
Nonpolar or semipolar group III-nitride substrates2024
Zwitterionic hydrogels for delivery of biomolecules2024
Image foreground segmentation algorithm based on edge knowledge transformation2024
Energy storage system in thermal power unit coordinated frequency regulation con2024
Pharmaceutical composition for preventing or treating cancer, containing N-1H-be2024
Stress-resistant, creep-resistant, high-temperature resistant and high-insulatio2024
Semiconductor devices incorporating quantum dots2024
Shift register, gate driving circuit and display panel2024