Insulated gate bipolar transistor device, manufacturing method for semiconductor device, and manufacturing method for insulated gate bipolar transistor device

Assignee

• Kyushu Institute Of Technology
• Mitsubishi Electric
• Kabushiki Kaisha Toshiba

Inventors

• Ichiro Omura (93 patents)
• Katsumi Satoh (37 patents)
• Tomoko Matsudai (128 patents)

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