Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective growth of SIO2 on dielectric surfaces in the presence of copper

Selective growth of SIO2 on dielectric surfaces in the presence of copper

US Patent 10825679 · Granted Nov 3, 2020

Estimated economic value: $88,965,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

UV cure for local stress modulation2025
Gapfill of variable aspect ratio features with a composite PEALD and PECVD metho2025
Selective processing with etch residue-based inhibitors2024
Selective processing with etch residue-based inhibitors2023
Selective deposition using hydrolysis2022
Vacuum-integrated hardmask processes and apparatus2021
Gapfill of variable aspect ratio features with a composite PEALD and PECVD metho2021
Selective growth of metal-containing hardmask thin films2021
Selective deposition with atomic layer etch reset2021
Selective deposition of silicon oxide2021
Conformality modulation of metal oxide films using chemical inhibition2020
Vacuum-integrated hardmask processes and apparatus2020