Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Data storage in synthetic antiferromagnets included in magnetic tunnel junctions

Data storage in synthetic antiferromagnets included in magnetic tunnel junctions

US Patent 10825500 · Granted Nov 3, 2020

Estimated economic value: $3,440,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming memory device2025
Semiconductor structure having memory device and method of forming the same2025
Semiconductor memory device and method for manufacturing the same2025
Three-dimensional memory device and method2025
Three axis magnetic field sensor2025
Local interconnects having different material compositions2025
Three-dimensional memory device and manufacturing method thereof2025
Magnetoresistive stack and methods therefor2025
Magnetoresistive stack and methods therefor2025
Magnetoresistive stack and methods therefor2025
Ferroelectric tunnel junction devices with a sparse seed layer and methods for f2025
Three-dimensional memory device and method2025