Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacturing method for high-electron-mobility transistor

Manufacturing method for high-electron-mobility transistor

US Patent 10811261 · Granted Oct 20, 2020

Estimated economic value: $14,765,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method for manufacturing the same2025
Nitride-based semiconductor device and method for manufacturing the same2025
Semiconductor device having improved p-type doped nitride-based semiconductor la2025
Semiconductor device2025
Semiconductor device and method for manufacturing the same2025
Reusable holding component for heatsink2025
NMOS half-bridge power device and manufacturing method thereof2025
Cap structure coupled to source to reduce saturation current in HEMT device2025
Integration manufacturing method of depletion high voltage NMOS device and deple2025
Semiconductor device and method for manufacturing the same2025
Semiconductor device with multichannel heterostructure and manufacturing method 2025
Semiconductor structure2025