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Home › Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

US Patent 10803942 · Granted Oct 13, 2020

Estimated economic value: $32,150,000 ⓘ

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