Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stressing structure with low hydrogen content layer over NiSi salicide

Stressing structure with low hydrogen content layer over NiSi salicide

US Patent 10770586 · Granted Sep 8, 2020

Estimated economic value: $7,831,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing an optical switching system2025
Optical switching system2025
Ultraviolet C (UVC) detection2025
Semiconductor device for writing to a storage element2025
Method of forming a GaN sensor having a controlled and stable threshold voltage 2023
Ultraviolet radiation sensor2023
High resolution radiation sensor based on single polysilicon floating gate array2023
Ultraviolet sensor and a method for sensing ultraviolet radiation2023
Electrostatically controlled gallium nitride based sensor and method of operatin2022
Apparatus, system and method of an electrostatically formed nanowire (EFN)2022
Apparatus, system and method of an electrostatically formed nanowire (EFN)2022
High resolution radiation sensor based on single polysilicon floating gate array2022