Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

US Patent 10763644 · Granted Sep 1, 2020

Estimated economic value: $3,521,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for fabricating a crystalline metal-phosphide hetero-layer by converting 2023
Tunable waveguide grating with a heating layer2023
Field-effect transistor structure and fabrication method2023
Silicon photonic tunable device with thermo-optic channel2022
Capacitorless DRAM cell2022
Field-effect transistor structure and fabrication method2021
Low-noise amplifier with quantized conduction channel2021
Compact electro-optical devices with laterally grown contact layers2021
Compact electro-optical devices with laterally grown contact layers2021
Method of forming an electro-optical device with lateral current injection regio2021
Method of forming an electro-optical device with lateral current injection regio2021
Capacitorless dram cell2021