Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating gate oxide of semiconductor device

Method of fabricating gate oxide of semiconductor device

US Patent 10763114 · Granted Sep 1, 2020

Estimated economic value: $11,573,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field effect transistors with dual silicide contact structures2025
Contact plugs for semiconductor device and method of forming same2025
Memory array circuit and method of manufacturing same2025
Semiconductor structure and method for manufacturing the same2025
Selective dual silicide formation2025
Transistor device for source/drain backside contact and method of forming cavity2025
Semiconductor device with source/drain contact formed using bottom-up deposition2025
Selective dual silicide formation using a maskless fabrication process flow2025
Semiconductor method and device2025
Fin field effect transistor device structure2025
Channel mobility improvement2024
Substrate processing method and substrate processing apparatus2024