Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical transistor having a silicided bottom and method for fabricating thereof

Vertical transistor having a silicided bottom and method for fabricating thereof

US Patent 10755937 · Granted Aug 25, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitor devices and fabrication methods thereof2022
Semiconductor structure2021
Method for fabricating vertical transistor having a silicided bottom2021
Method for fabricating vertical transistor having a silicided bottom2021
Method and apparatus for designing interconnection structure and method for manu2020
Semiconductor structure and fabrication method thereof2020
Vertical transistor having dual work function materials and method for fabricati2020
Vertical transistor having dual work function materials and method for fabricati2020
Semiconductor device manufacturing method with reduced gate electrode height los2020
EPI integrality on source/drain region of FinFET2019
Dimension-controlled via formation processing2017
Methods of facilitating fabricating transistors2016