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Home › Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating

Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating

US Patent 10734384 · Granted Aug 4, 2020

Estimated economic value: $17,142,000 ⓘ

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