Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench-gate insulated-gate bipolar transistors (IGBTs)

Trench-gate insulated-gate bipolar transistors (IGBTs)

US Patent 10727326 · Granted Jul 28, 2020

Estimated economic value: $39,888,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of preparing programmable diode, programmable diode and ferroelectric mem2025
Method and apparatus for plasma dicing a semi-conductor wafer2025
Memristor, method of calculating hamming distance, and in-memory computing integ2025
Shielded gate trench power MOSFET with high-k shield dielectric2025
Pressure sensor based on zinc oxide nanowires and method of manufacturing pressu2025
All-electrically-controlled spintronic neuron device, neuron circuit and neural 2025
Memory cell structure, memory array structure, and voltage biasing method2025
Semiconductor devices and methods of manufacturing semiconductor devices2025
Fan-out wafer level packaging of semiconductor devices2025
Method of separating electronic devices having a back layer and apparatus2025
Monolithic semiconductor device assemblies2024
Electronic device including a semiconductor layer within a trench and a semicond2024