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Home › Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film

Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film

US Patent 10727318 · Granted Jul 28, 2020

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