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Home › Controlling dimensions of a negative capacitance layer of a gate stack of a field-effect transistor (FET) to increase power density

Controlling dimensions of a negative capacitance layer of a gate stack of a field-effect transistor (FET) to increase power density

US Patent 10714582 · Granted Jul 14, 2020

Estimated economic value: $17,768,000 ⓘ

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