Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for forming a silicon germanium tin layer and related semiconductor device structures

Methods for forming a silicon germanium tin layer and related semiconductor device structures

US Patent 10685834 · Granted Jun 16, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Susceptor improvement2025
Epitaxial methods including a haloborane formula for growing boron-containing st2025
Flow guide structures and heat shield structures, and related methods, for depos2025
Method for depositing boron and gallium containing silicon germanium layers2025
Method for depositing boron and gallium containing silicon germanium layers2025
Method for depositing a Group IV semiconductor and related semiconductor device 2025
Method for depositing a Group IV semiconductor and related semiconductor device 2025
Monolithic complementary field-effect transistors having carbon-doped release la2025
Method for cleaning quartz epitaxial chambers2025
Gas-phase reactor system-with a reaction chamber, a solid precursor source vesse2025
Methods for silicon germanium uniformity control using multiple precursors2024
Semiconductor processing apparatus and methods for calibrating a semiconductor p2024