Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device

Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device

US Patent 10672875 · Granted Jun 2, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a semiconductor device2025
Semiconductor device including a field stop region2025
Method of manufacturing a metal silicide layer above a silicon carbide substrate2025
Power semiconductor device having an electrode with an embedded material2025
Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, met2025
Semiconductor device including a field stop region2025
Transistor device and method of manufacturing2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Method for splitting semiconductor wafers2025
Power semiconductor device and method2025
Method of manufacturing silicon carbide semiconductor devices2025