Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Junctionless transistor based on vertically integrated gate-all-round multiple nanowire channels and method of manufacturing the same

Junctionless transistor based on vertically integrated gate-all-round multiple nanowire channels and method of manufacturing the same

US Patent 10665671 · Granted May 26, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Battery module2025
Neural core, neural processor, and data processing method thereof2025
Activation based dynamic network pruning2025
Battery module and battery pack having the same2025
Ground-connected supports with insulating spacers for semiconductor memory capac2025
Ternary logic element and ternary logic system including same2025
Battery pack2025
Battery module2025
Single transistor with double gate structure for adjustable firing threshold vol2024
Battery module and manufacturing method thereof2024
Pouch-type battery cell2024
Semiconductor device, layout design method for the same and method for fabricati2024