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Home › Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin

Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin

US Patent 10651296 · Granted May 12, 2020

Estimated economic value: $7,505,000 ⓘ

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