Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power semiconductor device having different gate crossings, and method for manufacturing thereof

Power semiconductor device having different gate crossings, and method for manufacturing thereof

US Patent 10629595 · Granted Apr 21, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor arrangement with a load transistor and a sense transistor2025
Transistor device having a cell field and method of fabricating a gate of the tr2025
Semiconductor transistor device having a titled body contact area and method of 2024
Method of forming a semiconductor module2024
Transistor arrangement with a load transistor and a sense transistor2024
Semiconductor module having a multi-branch switch node connector2024
Semiconductor package, semiconductor module and methods for manufacturing a semi2024
Semiconductor device2024
Semiconductor module2024
Semiconductor device having a main transistor, a sense transistor, and a bypass 2024
Semiconductor device having a metallization structure2024
MOSFET having a drift region with a graded doping profile and methods of manufac2023