Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral insulated-gate bipolar transistor and method therefor

Lateral insulated-gate bipolar transistor and method therefor

US Patent 10593796 · Granted Mar 17, 2020

Estimated economic value: $8,228,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Lateral insulated-gate bipolar transistor and method therefor2021
Lateral insulated-gate bipolar transistor and method therefor2021
Lateral insulated-gate bipolar transistor and method therefor2021
High voltage semiconductor devices and methods for their fabrication2019
Semiconductor device with vertical field floating rings and methods of fabricati2018
Semiconductor device with floating field plates2017
Semiconductor device with floating field plates2017
Semiconductor devices with vertical field floating rings and methods of fabricat2017
Trenched Faraday shielding2016
Method of manufacturing a device having a shield plate dopant region2016
Device having a shield plate dopant region and method of manufacturing same2016
RF power transistor device with metal electromigration design and method thereof2009