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Home › Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth

Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth

US Patent 10593543 · Granted Mar 17, 2020

Estimated economic value: $17,260,000 ⓘ

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