Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stabilized, high-doped silicon carbide

Stabilized, high-doped silicon carbide

US Patent 10577720 · Granted Mar 3, 2020

Estimated economic value: $16,527,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Large diameter silicon carbide wafers2025
Large dimension silicon carbide single crystalline materials with reduced crysta2024
Large diameter silicon carbide wafers2024
Stabilized, high-doped silicon carbide2022
Stabilized, high-doped silicon carbide2022
Stabilized, high-doped silicon carbide2022
Using a carbon vacancy reduction material to increase average carrier lifetime i2020
Reduction of carrot defects in silicon carbide epitaxy2018
Method of producing high quality silicon carbide crystal in a seeded growth syst2017
SiC devices with high blocking voltage terminated by a negative bevel2016
Producing high quality bulk silicon carbide single crystal by managing thermal s2015
Group III nitride based light emitting diode structures with a quantum well and 2015