Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical transistor having dual work function materials and method for fabricating thereof

Vertical transistor having dual work function materials and method for fabricating thereof

US Patent 10559684 · Granted Feb 11, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitor devices and fabrication methods thereof2022
Semiconductor structure2021
Method for fabricating vertical transistor having a silicided bottom2021
Method for fabricating vertical transistor having a silicided bottom2021
Method and apparatus for designing interconnection structure and method for manu2020
Vertical transistor having a silicided bottom and method for fabricating thereof2020
Vertical transistor having a silicided bottom and method for fabricating thereof2020
Semiconductor structure and fabrication method thereof2020
Semiconductor device manufacturing method with reduced gate electrode height los2020
EPI integrality on source/drain region of FinFET2019
Dimension-controlled via formation processing2017
Methods of facilitating fabricating transistors2016