Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GaN lateral vertical HJFET with source-P block contact

GaN lateral vertical HJFET with source-P block contact

US Patent 10535740 · Granted Jan 14, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

GaN lateral vertical HJFET with source-P block contact2022
GaN lateral vertical JFET with regrown channel and dielectric gate2021
High power gallium nitride electronics using miscut substrates2020
High power gallium nitride electronics using miscut substrates2020
GaN lateral vertical JFET with regrown channel and dielectric gate2020
High power gallium nitride electronics using miscut substrates2019
High power gallium nitride electronics using miscut substrates2016