Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults

Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults

US Patent 10530353 · Granted Jan 7, 2020

Estimated economic value: $172,734,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for automating clothing transaction2025
Gate drive control method for SiC and IGBT power devices to control desaturation2023
Gate drive control method for SiC and IGBT power devices to control desaturation2023
Gate drive control method for SiC and IGBT power devices to control desaturation2023
Gate drive control method for SiC and IGBT power devices to control desaturation2023
Systems and methods for improved radar scanning coverage and efficiency2022
Gate drive control method for SiC and IGBT power devices to control desaturation2021
Gate drive control method for SiC and IGBT power devices to control desaturation2021
Gate drive control method for SiC and IGBT power devices to control desaturation2021
Gate drive control method for SiC and IGBT power devices to control desaturation2021
Apparatus, system and method for labeling tiles for a mosaic image2021
Intranasal spray device containing pharmaceutical composition2017