Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

US Patent 10490564 · Granted Nov 26, 2019

Estimated economic value: $67,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bonded assembly containing conductive via structures extending through word line2025
Three-dimensional memory device with separated contact regions and methods for f2024
Three-dimensional memory device containing self-aligned bit line contacts and me2024
Three-dimensional memory device with separated source-side lines and method of m2024
Information processing device, information processing method, and information pr2022
Three-dimensional memory device including through-memory-level via structures an2022
Three-dimensional memory device containing a shared word line driver across diff2022
Three-dimensional memory device with separated source-side lines and method of m2022
Three-dimensional memory device containing a shared word line driver across diff2022
Three-dimensional device with bonded structures including a support die and meth2022
Active-energy-ray-curable liquid composition, three-dimensional object forming m2021
Three-dimensional device with bonded structures including a support die and meth2021