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Home › Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling

Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling

US Patent 10468425 · Granted Nov 5, 2019

Estimated economic value: $13,575,000 ⓘ

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